CSD13201W10 Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.193
100 — 249	0.148
250 — 999	0.109
1,000 +	0.05

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-4
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	1.6 A
Rds On - Drain-Source Resistance	34 mOhms
Vgs th - Gate-Source Threshold Voltage	650 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	2.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.2 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1 mm
Series	CSD13201W10
Transistor Type	1 N-Channel
Width	1 mm
Brand	Texas Instruments
Forward Transconductance - Min	23 S
Fall Time	9.7 ns
Product Type	MOSFET
Rise Time	5.9 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	14.4 ns
Typical Turn-On Delay Time	3.9 ns
Unit Weight	0.000039 oz

For more information, please refer to datasheet

Documents

CSD13201W10 Datasheet

More Information

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.