CSD13202Q2 Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.281
100 — 249	0.191
250 — 999	0.147
1,000 +	0.07

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-6
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	14.4 A
Rds On - Drain-Source Resistance	9.3 mOhms
Vgs th - Gate-Source Threshold Voltage	580 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	5.1 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.7 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.75 mm
Length	2 mm
Series	CSD13202Q2
Transistor Type	1 N-Channel
Width	2 mm
Brand	Texas Instruments
Forward Transconductance - Min	44 S
Fall Time	13.6 ns
Product Type	MOSFET
Rise Time	28 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	4.5 ns
Unit Weight	0.000208 oz

For more information, please refer to datasheet

Documents

CSD13202Q2 Datasheet

More Information

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.