Description
CSD13303W1015 Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.282 |
| 100 — 249 | 0.217 |
| 250 — 999 | 0.159 |
| 1,000 + | 0.08 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 3.5 A |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 3.9 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.65 W |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.625 mm |
| Length | 1.5 mm |
| Series | CSD13303W1015 |
| Transistor Type | 1 N-Channel |
| Width | 1 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 14 S |
| Fall Time | 3.2 ns |
| Product Type | MOSFET |
| Rise Time | 10 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 14.7 ns |
| Typical Turn-On Delay Time | 4.6 ns |
| Unit Weight | 0.000060 oz |
For more information, please refer to datasheet
Documents
| CSD13303W1015 Datasheet |
More Information
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
