Description
CSD13306W Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.274 |
| 100 — 249 | 0.211 |
| 250 — 999 | 0.155 |
| 1,000 + | 0.08 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 3.5 A |
| Rds On - Drain-Source Resistance | 10.2 mOhms |
| Vgs - Gate-Source Voltage | 10 V |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.62 mm |
| Length | 1.5 mm |
| Series | CSD13306W |
| Transistor Type | 1 N-Channel |
| Width | 1 mm |
| Brand | Texas Instruments |
| Product Type | MOSFET |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000060 oz |
For more information, please refer to datasheet
Documents
| CSD13306W Datasheet |
More Information
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
