CSD13306WT Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.768
100 — 249	0.591
250 — 999	0.435
1,000 +	0.22

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-6
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	3.5 A
Rds On - Drain-Source Resistance	10.2 mOhms
Vgs th - Gate-Source Threshold Voltage	700 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	8.6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.9 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1.5 mm
Series	CSD13306W
Transistor Type	1 N-Channel
Width	1 mm
Brand	Texas Instruments
Forward Transconductance - Min	15 S
Fall Time	8 ns
Moisture Sensitive	Yes
Product Type	MOSFET
Rise Time	11 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	7 ns
Unit Weight	0.000060 oz

For more information, please refer to datasheet

Documents

CSD13306WT Datasheet

More Information

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.