CSD13380F3 Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.117
100 — 249	0.076
250 — 999	0.057
1,000 +	0.03

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	3.6 A
Rds On - Drain-Source Resistance	76 mOhms
Vgs th - Gate-Source Threshold Voltage	550 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	1.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.4 W
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Height	0.35 mm
Length	0.73 mm
Series	CSD13380F3
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	4.3 S
Fall Time	3 ns
Product Type	MOSFET
Rise Time	4 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	4 ns
Unit Weight	0.000011 oz

For more information, please refer to datasheet

Documents

CSD13380F3 Datasheet

More Information

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.