CSD13380F3T


YeeHing #: Y012-CSD13380F3T
Inventory: 2000

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Description

CSD13380F3T Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.735
100 — 249 0.476
250 — 999 0.358
1,000 + 0.14

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case PICOSTAR-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 3.6 A
Rds On - Drain-Source Resistance 76 mOhms
Vgs th - Gate-Source Threshold Voltage 550 mV
Vgs - Gate-Source Voltage 8 V
Qg - Gate Charge 1.2 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W
Configuration Single
Channel Mode Enhancement
Packaging Reel
Height 0.35 mm
Length 0.73 mm
Series CSD13380F3
Transistor Type 1 N-Channel
Width 0.64 mm
Brand Texas Instruments
Forward Transconductance - Min 4.3 S
Fall Time 3 ns
Product Type MOSFET
Rise Time 4 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 4 ns
Unit Weight 0.000011 oz

For more information, please refer to datasheet

Documents

CSD13380F3T Datasheet

More Information

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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