CSD13381F4T Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.68
100 — 249	0.462
250 — 999	0.357
1,000 +	0.17

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	2.1 A
Rds On - Drain-Source Resistance	180 mOhms
Vgs th - Gate-Source Threshold Voltage	850 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	1.06 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD13381F4
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	3.2 S
Fall Time	3.8 ns
Product Type	MOSFET
Rise Time	1.5 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	3.7 ns
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD13381F4T Datasheet

More Information

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.