Texas Instruments
CSD13383F4
CSD13383F4
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$0.04 USD
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CSD13383F4 Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.161 |
| 100 — 249 | 0.109 |
| 250 — 999 | 0.084 |
| 1,000 + | 0.04 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PICOSTAR-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 2.9 A |
| Rds On - Drain-Source Resistance | 44 mOhms |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 2 nC |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.35 mm |
| Length | 1 mm |
| Series | CSD13383F4 |
| Transistor Type | 1 N-Channel |
| Width | 0.64 mm |
| Brand | Texas Instruments |
| Product Type | MOSFET |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000014 oz |
For more information, please refer to datasheet
Documents
| CSD13383F4 Datasheet |
More Information
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
