CSD13383F4 Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.161
100 — 249	0.109
250 — 999	0.084
1,000 +	0.04

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	2.9 A
Rds On - Drain-Source Resistance	44 mOhms
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	2 nC
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD13383F4
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Product Type	MOSFET
Factory Pack Quantity	3000
Subcategory	MOSFETs
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD13383F4 Datasheet

More Information

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.