Texas Instruments
CSD13385F5
CSD13385F5
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$0.05 USD
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CSD13385F5 Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.218 |
| 100 — 249 | 0.148 |
| 250 — 999 | 0.114 |
| 1,000 + | 0.05 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PICOSTAR-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 7.1 A |
| Rds On - Drain-Source Resistance | 19 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 5 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.4 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.35 mm |
| Length | 1.53 mm |
| Series | CSD13385F5 |
| Transistor Type | 1 N-Channel |
| Width | 0.77 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 11.3 S |
| Fall Time | 10 ns |
| Product Type | MOSFET |
| Rise Time | 10 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.000025 oz |
For more information, please refer to datasheet
Documents
| CSD13385F5 Datasheet |
More Information
This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
