CSD13385F5 Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.218
100 — 249	0.148
250 — 999	0.114
1,000 +	0.05

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	7.1 A
Rds On - Drain-Source Resistance	19 mOhms
Vgs th - Gate-Source Threshold Voltage	500 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.4 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.35 mm
Length	1.53 mm
Series	CSD13385F5
Transistor Type	1 N-Channel
Width	0.77 mm
Brand	Texas Instruments
Forward Transconductance - Min	11.3 S
Fall Time	10 ns
Product Type	MOSFET
Rise Time	10 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	33 ns
Typical Turn-On Delay Time	7 ns
Unit Weight	0.000025 oz

For more information, please refer to datasheet

Documents

CSD13385F5 Datasheet

More Information

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.