CSD15380F3T Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.683
100 — 249	0.464
250 — 999	0.358
1,000 +	0.17

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	500 mA
Rds On - Drain-Source Resistance	1.46 Ohms
Vgs th - Gate-Source Threshold Voltage	850 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	216 pC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Channel Mode	Enhancement
Tradename	PicoStar
Packaging	Reel
Height	0.35 mm
Length	0.73 mm
Series	CSD15380F3
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	0.64 S
Fall Time	7 ns
Product Type	MOSFET
Rise Time	1 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	7 ns
Typical Turn-On Delay Time	3 ns
Unit Weight	0.000011 oz

For more information, please refer to datasheet

Documents

CSD15380F3T Datasheet

More Information

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.