CSD15380F3T


YeeHing #: Y012-CSD15380F3T
Inventory: 6200

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Description

CSD15380F3T Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.683
100 — 249 0.464
250 — 999 0.358
1,000 + 0.17

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case PICOSTAR-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 500 mA
Rds On - Drain-Source Resistance 1.46 Ohms
Vgs th - Gate-Source Threshold Voltage 850 mV
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 216 pC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW (1/2 W)
Configuration Single
Channel Mode Enhancement
Tradename PicoStar
Packaging Reel
Height 0.35 mm
Length 0.73 mm
Series CSD15380F3
Transistor Type 1 N-Channel
Width 0.64 mm
Brand Texas Instruments
Forward Transconductance - Min 0.64 S
Fall Time 7 ns
Product Type MOSFET
Rise Time 1 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 7 ns
Typical Turn-On Delay Time 3 ns
Unit Weight 0.000011 oz

For more information, please refer to datasheet

Documents

CSD15380F3T Datasheet

More Information

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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