Description
CSD15571Q2 Texas Instruments - Yeehing Electronics
20-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 19.2 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.258 |
100 — 249 | 0.176 |
250 — 999 | 0.135 |
1,000 + | 0.06 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | WSON-6 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 22 A |
Rds On - Drain-Source Resistance | 15 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 5.1 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 0.75 mm |
Length | 2 mm |
Series | CSD15571Q2 |
Transistor Type | 1 N-Channel |
Width | 2 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 25 S |
Fall Time | 4.1 ns |
Product Type | MOSFET |
Rise Time | 17.2 ns |
Factory Pack Quantity | 3000 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 9.9 ns |
Typical Turn-On Delay Time | 4.7 ns |
Unit Weight | 0.000198 oz |
For more information, please refer to datasheet
Documents
CSD15571Q2 Datasheet |
More Information
The NexFET power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2x2 offers excellent thermal performance for the size of the package.