Texas Instruments
CSD16301Q2
CSD16301Q2
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$0.07 USD
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CSD16301Q2 Texas Instruments - Yeehing Electronics
25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.307 |
| 100 — 249 | 0.209 |
| 250 — 999 | 0.161 |
| 1,000 + | 0.07 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | WSON-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 24 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 2 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 15 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.75 mm |
| Length | 2 mm |
| Series | CSD16301Q2 |
| Transistor Type | 1 N-Channel Power MOSFET |
| Width | 2 mm |
| Brand | Texas Instruments |
| Fall Time | 1.7 ns |
| Product Type | MOSFET |
| Rise Time | 4.4 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 4.1 ns |
| Typical Turn-On Delay Time | 2.7 ns |
| Unit Weight | 0.000307 oz |
For more information, please refer to datasheet
Documents
| CSD16301Q2 Datasheet |
More Information
This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.
