CSD16321Q5 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	1.201
100 — 249	0.992
250 — 999	0.712
1,000 +	0.38

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-CLIP-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	2.4 mOhms
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	14 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	113 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	6 mm
Series	CSD16321Q5
Transistor Type	1 N-Channel
Width	5 mm
Brand	Texas Instruments
Forward Transconductance - Min	150 S
Development Kit	TPS51218EVM-49, TPS40304EVM-353
Fall Time	17 ns
Product Type	MOSFET
Rise Time	15 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	9 ns
Unit Weight	0.004141 oz

For more information, please refer to datasheet

Documents

CSD16321Q5 Datasheet

More Information

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.