CSD16322Q5


YeeHing #: Y012-CSD16322Q5
Inventory: 6000

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Description

CSD16322Q5 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.867
100 — 249 0.667
250 — 999 0.491
1,000 + 0.28

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 5.8 mOhms
Vgs th - Gate-Source Threshold Voltage 1.1 V
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 6.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.1 W
Configuration Single
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD16322Q5
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 106 S
Fall Time 3.7 ns
Product Type MOSFET
Rise Time 10.7 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 12.3 ns
Typical Turn-On Delay Time 6.1 ns
Unit Weight 0.003891 oz

For more information, please refer to datasheet

Documents

CSD16322Q5 Datasheet

More Information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

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