CSD16323Q3 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.832
100 — 249	0.64
250 — 999	0.471
1,000 +	0.27

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	4.5 mOhms
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	6.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	74 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD16323Q3
Transistor Type	1 N-Channel Power MOSFET
Width	3.3 mm
Brand	Texas Instruments
Fall Time	6.3 ns
Product Type	MOSFET
Rise Time	15 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	5.3 ns
Unit Weight	0.001541 oz

For more information, please refer to datasheet

Documents

CSD16323Q3 Datasheet

More Information

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.