CSD16325Q5


YeeHing #: Y012-CSD16325Q5
Inventory: 2400

Feel free to reach out to us for more information.
Click the button below to unveil exclusive discounts and delightful surprises.

Description

CSD16325Q5 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.425
100 — 249 1.177
250 — 999 0.845
1,000 + 0.36

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 2.2 mOhms
Vgs th - Gate-Source Threshold Voltage 1.1 V
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.1 W
Configuration Single
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD16325Q5
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 159 S
Fall Time 12 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 10.5 ns
Unit Weight 0.004159 oz

For more information, please refer to datasheet

Documents

CSD16325Q5 Datasheet

More Information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

You may also like

Recently viewed