CSD16327Q3 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.788
100 — 249	0.606
250 — 999	0.446
1,000 +	0.22

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	4.8 mOhms
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	6.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3 W
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD16327Q3
Transistor Type	1 N-Channel
Width	3.3 mm
Brand	Texas Instruments
Product Type	MOSFET
Factory Pack Quantity	2500
Subcategory	MOSFETs
Unit Weight	0.001549 oz

For more information, please refer to datasheet

Documents

CSD16327Q3 Datasheet

More Information

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.