CSD16406Q3


YeeHing #: Y012-CSD16406Q3
Inventory: 69800

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Description

CSD16406Q3 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 7.4 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.798
100 — 249 0.614
250 — 999 0.452
1,000 + 0.26

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 5.3 mOhms
Vgs th - Gate-Source Threshold Voltage 1.4 V
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 5.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 46 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 3.3 mm
Series CSD16406Q3
Transistor Type 1 N-Channel Power MOSFET
Width 3.3 mm
Brand Texas Instruments
Fall Time 4.8 ns
Product Type MOSFET
Rise Time 12.9 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 8.5 ns
Typical Turn-On Delay Time 7.3 ns
Unit Weight 0.001541 oz

For more information, please refer to datasheet

Documents

CSD16406Q3 Datasheet

More Information

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET has been designed to minimize losses in power conversion applications.

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