CSD16570Q5BT Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	1.926
100 — 249	1.591
250 — 999	1.143
1,000 +	5.49

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	680 uOhms
Vgs th - Gate-Source Threshold Voltage	1.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	192 nC
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Pd - Power Dissipation	195 W
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	6 mm
Series	CSD16570Q5
Transistor Type	1 N-Channel
Width	5 mm
Brand	Texas Instruments
Fall Time	72 ns
Product Type	MOSFET
Rise Time	43 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	156 ns
Typical Turn-On Delay Time	5 ns
Unit Weight	0.000847 oz

For more information, please refer to datasheet

Documents

CSD16570Q5BT Datasheet

More Information

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.