Description
CSD17303Q5 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.263 |
100 — 249 | 1.043 |
250 — 999 | 0.75 |
1,000 + | 0.32 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-CLIP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 2.4 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs - Gate-Source Voltage | 8 V |
Qg - Gate Charge | 18 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.2 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD17303Q5 |
Transistor Type | 1 N-Channel |
Width | 5 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 114 S |
Fall Time | 10.4 ns |
Product Type | MOSFET |
Rise Time | 16 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 27 ns |
Typical Turn-On Delay Time | 11.4 ns |
Unit Weight | 0.004060 oz |
For more information, please refer to datasheet
Documents
CSD17303Q5 Datasheet |
More Information
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.