Description
CSD17304Q3 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.625 |
| 100 — 249 | 0.481 |
| 250 — 999 | 0.354 |
| 1,000 + | 0.15 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-CLIP-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 56 A |
| Rds On - Drain-Source Resistance | 7.5 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 5.1 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.7 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 3.3 mm |
| Series | CSD17304Q3 |
| Transistor Type | 1 N-Channel |
| Type | Power MOSFET |
| Width | 3.3 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 48 S |
| Development Kit | TPS65090EVM |
| Fall Time | 3.1 ns |
| Product Type | MOSFET |
| Rise Time | 9.1 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 10.4 ns |
| Typical Turn-On Delay Time | 5.1 ns |
| Unit Weight | 0.001432 oz |
For more information, please refer to datasheet
Documents
| CSD17304Q3 Datasheet |
More Information
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
