CSD17308Q3 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.598
100 — 249	0.46
250 — 999	0.339
1,000 +	0.19

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	10.3 mOhms
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	3.9 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	28 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD17308Q3
Transistor Type	1 N-Channel Power MOSFET
Width	3.3 mm
Brand	Texas Instruments
Development Kit	BQ500211AEVM-210
Fall Time	2.3 ns
Product Type	MOSFET
Rise Time	5.7 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	9.9 ns
Typical Turn-On Delay Time	4.5 ns
Unit Weight	0.001446 oz

For more information, please refer to datasheet

Documents

CSD17308Q3 Datasheet

More Information

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.