Texas Instruments
CSD17308Q3
CSD17308Q3
Regular price
$0.19 USD
Regular price
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$0.19 USD
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CSD17308Q3 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.598 |
| 100 — 249 | 0.46 |
| 250 — 999 | 0.339 |
| 1,000 + | 0.19 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-Clip-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance | 10.3 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 3.9 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 28 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 3.3 mm |
| Series | CSD17308Q3 |
| Transistor Type | 1 N-Channel Power MOSFET |
| Width | 3.3 mm |
| Brand | Texas Instruments |
| Development Kit | BQ500211AEVM-210 |
| Fall Time | 2.3 ns |
| Product Type | MOSFET |
| Rise Time | 5.7 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 9.9 ns |
| Typical Turn-On Delay Time | 4.5 ns |
| Unit Weight | 0.001446 oz |
For more information, please refer to datasheet
Documents
| CSD17308Q3 Datasheet |
More Information
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
