Description
CSD17309Q3 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.805 |
100 — 249 | 0.619 |
250 — 999 | 0.456 |
1,000 + | 0.23 |
The above prices are for reference only.
Specifications
Manufacturer | Vishay |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 18 mOhms |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Vgs - Gate-Source Voltage | 4.5 V |
Qg - Gate Charge | 22 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.1 W |
Configuration | Dual |
Channel Mode | Enhancement |
Tradename | TrenchFET |
Packaging | Reel |
Height | 1.75 mm |
Length | 4.9 mm |
Series | SI9 |
Transistor Type | 2 N-Channel |
Width | 3.9 mm |
Brand | Vishay / Siliconix |
Forward Transconductance - Min | 45 S |
Fall Time | 12 ns |
Product Type | MOSFET |
Rise Time | 10 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 15 ns |
Part # Aliases | SI9926CDY-E3 |
Unit Weight | 0.006596 oz |
For more information, please refer to datasheet
Documents
CSD17309Q3 Datasheet |
More Information
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.