CSD17313Q2 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.307
100 — 249	0.209
250 — 999	0.161
1,000 +	0.09

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-FET-6
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	32 mOhms
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	10 V, - 8 V
Qg - Gate Charge	2.1 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	17 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.75 mm
Length	2 mm
Series	CSD17313Q2
Transistor Type	1 N-Channel
Width	2 mm
Brand	Texas Instruments
Forward Transconductance - Min	16 S
Fall Time	1.3 ns
Product Type	MOSFET
Rise Time	3.9 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	4.2 ns
Typical Turn-On Delay Time	2.8 ns

For more information, please refer to datasheet

Documents

CSD17313Q2 Datasheet

More Information

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.