Description
CSD17318Q2 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.25 |
| 100 — 249 | 0.17 |
| 250 — 999 | 0.131 |
| 1,000 + | 0.06 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | WSON-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 25 A |
| Rds On - Drain-Source Resistance | 16.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 6 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 16 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Series | CSD17318Q2 |
| Transistor Type | 1 N-Channel |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 42 S |
| Fall Time | 4 ns |
| Product Type | MOSFET |
| Rise Time | 16 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 5 ns |
| Unit Weight | 0.000194 oz |
For more information, please refer to datasheet
Documents
| CSD17318Q2 Datasheet |
More Information
This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
