CSD17318Q2T


YeeHing #: Y012-CSD17318Q2T
Inventory: 5800

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Description

CSD17318Q2T Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.824
100 — 249 0.56
250 — 999 0.432
1,000 + 0.20

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case WSON-6
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 25 A
Rds On - Drain-Source Resistance 16.9 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 6 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 16 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Series CSD17318Q2
Transistor Type 1 N-Channel
Brand Texas Instruments
Forward Transconductance - Min 42 S
Fall Time 4 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 5 ns
Unit Weight 0.000194 oz

For more information, please refer to datasheet

Documents

CSD17318Q2T Datasheet

More Information

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

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