CSD17318Q2T Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.824
100 — 249	0.56
250 — 999	0.432
1,000 +	0.20

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-6
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	25 A
Rds On - Drain-Source Resistance	16.9 mOhms
Vgs th - Gate-Source Threshold Voltage	600 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	16 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD17318Q2
Transistor Type	1 N-Channel
Brand	Texas Instruments
Forward Transconductance - Min	42 S
Fall Time	4 ns
Product Type	MOSFET
Rise Time	16 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	5 ns
Unit Weight	0.000194 oz

For more information, please refer to datasheet

Documents

CSD17318Q2T Datasheet

More Information

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.