CSD17382F4 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.149
100 — 249	0.101
250 — 999	0.078
1,000 +	0.04

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	2.3 A
Rds On - Drain-Source Resistance	67 mOhms
Vgs th - Gate-Source Threshold Voltage	700 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	2.1 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Channel Mode	Enhancement
Tradename	PicoStar
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD17382F4
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	5.9 S
Fall Time	270 ns
Product Type	MOSFET
Rise Time	111 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	279 ns
Typical Turn-On Delay Time	59 ns
Unit Weight	0.000025 oz

For more information, please refer to datasheet

Documents

CSD17382F4 Datasheet

More Information

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.