CSD17483F4 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.109
100 — 249	0.074
250 — 999	0.057
1,000 +	0.03

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	1.5 A
Rds On - Drain-Source Resistance	230 mOhms
Vgs th - Gate-Source Threshold Voltage	850 mV
Vgs - Gate-Source Voltage	12 V
Qg - Gate Charge	1.01 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD17483F4
Transistor Type	1 N-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	2.4 S
Fall Time	3.4 ns
Product Type	MOSFET
Rise Time	1.3 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	10.6 ns
Typical Turn-On Delay Time	3.3 ns
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD17483F4 Datasheet

More Information

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.