Texas Instruments
CSD17483F4T
CSD17483F4T
Regular price
$0.17 USD
Regular price
Sale price
$0.17 USD
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CSD17483F4T Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.683 |
| 100 — 249 | 0.464 |
| 250 — 999 | 0.358 |
| 1,000 + | 0.17 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PICOSTAR-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 1.5 A |
| Rds On - Drain-Source Resistance | 230 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Vgs - Gate-Source Voltage | 12 V |
| Qg - Gate Charge | 1.01 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Configuration | Single |
| Packaging | Reel |
| Height | 0.35 mm |
| Length | 1 mm |
| Series | CSD17483F4 |
| Transistor Type | 1 N-Channel |
| Width | 0.64 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 2.4 S |
| Fall Time | 3.4 ns |
| Product Type | MOSFET |
| Rise Time | 1.3 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 10.6 ns |
| Typical Turn-On Delay Time | 3.3 ns |
| Unit Weight | 0.000014 oz |
For more information, please refer to datasheet
Documents
| CSD17483F4T Datasheet |
More Information
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
