Description
CSD17483F4T Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.683 |
100 — 249 | 0.464 |
250 — 999 | 0.358 |
1,000 + | 0.17 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | PICOSTAR-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 1.5 A |
Rds On - Drain-Source Resistance | 230 mOhms |
Vgs th - Gate-Source Threshold Voltage | 850 mV |
Vgs - Gate-Source Voltage | 12 V |
Qg - Gate Charge | 1.01 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 500 mW (1/2 W) |
Configuration | Single |
Packaging | Reel |
Height | 0.35 mm |
Length | 1 mm |
Series | CSD17483F4 |
Transistor Type | 1 N-Channel |
Width | 0.64 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 2.4 S |
Fall Time | 3.4 ns |
Product Type | MOSFET |
Rise Time | 1.3 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 10.6 ns |
Typical Turn-On Delay Time | 3.3 ns |
Unit Weight | 0.000014 oz |
For more information, please refer to datasheet
Documents
CSD17483F4T Datasheet |
More Information
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.