Description
CSD17501Q5A Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.411 |
| 100 — 249 | 1.166 |
| 250 — 999 | 0.837 |
| 1,000 + | 0.44 |
The above prices are for reference only.
Specifications
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 25 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 40 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 136 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | TrenchFET |
| Packaging | Reel |
| Series | SUD |
| Transistor Type | 1 P-Channel |
| Brand | Vishay / Siliconix |
| Forward Transconductance - Min | 70 S |
| Fall Time | 80 ns |
| Product Type | MOSFET |
| Rise Time | 40 ns |
| Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 8 ns |
| Unit Weight | 0.050717 oz |
For more information, please refer to datasheet
Documents
| CSD17501Q5A Datasheet |
More Information
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
