CSD17552Q3A


YeeHing #: Y012-CSD17552Q3A
Inventory: 3000

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Description

CSD17552Q3A Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.689
100 — 249 0.53
250 — 999 0.39
1,000 + 0.20

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case VSONP-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 48 A
Rds On - Drain-Source Resistance 8.1 mOhms
Vgs th - Gate-Source Threshold Voltage 1.5 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 9 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.6 W
Configuration Single
Tradename NexFET
Packaging Reel
Height 0.9 mm
Length 3.15 mm
Series CSD17552Q3A
Transistor Type 1 N-Channel
Width 3 mm
Brand Texas Instruments
Forward Transconductance - Min 106 S
Fall Time 3.4 ns
Product Type MOSFET
Rise Time 7.4 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 7.2 ns
Unit Weight 0.000981 oz

For more information, please refer to datasheet

Documents

CSD17552Q3A Datasheet

More Information

This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET is designed to minimize losses in power conversion applications.

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