CSD17556Q5B Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	1.72
100 — 249	1.421
250 — 999	1.021
1,000 +	0.54

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1.5 mOhms
Vgs th - Gate-Source Threshold Voltage	1.4 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	28.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3.1 W
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	6 mm
Series	CSD17556Q5B
Transistor Type	1 N-Channel
Width	5 mm
Brand	Texas Instruments
Forward Transconductance - Min	197 S
Fall Time	12 ns
Product Type	MOSFET
Rise Time	26 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	14 ns
Unit Weight	0.004751 oz

For more information, please refer to datasheet

Documents

CSD17556Q5B Datasheet

More Information

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.