Description
CSD17570Q5BT Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.951 |
| 100 — 249 | 1.611 |
| 250 — 999 | 1.158 |
| 1,000 + | 0.70 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-Clip-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 740 uOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 93 nC |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 6 mm |
| Series | CSD17570Q5B |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | Texas Instruments |
| Product Type | MOSFET |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Unit Weight | 0.004741 oz |
For more information, please refer to datasheet
Documents
| CSD17570Q5BT Datasheet |
More Information
This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.
