CSD17571Q2 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.258
100 — 249	0.176
250 — 999	0.135
1,000 +	0.07

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-6
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	22 A
Rds On - Drain-Source Resistance	24 mOhms
Vgs th - Gate-Source Threshold Voltage	1.3 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	2.4 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.75 mm
Length	2 mm
Series	CSD17571Q2
Transistor Type	1 N-Channel
Width	2 mm
Brand	Texas Instruments
Forward Transconductance - Min	43 S
Development Kit	BOOSTXL-ULN2003
Fall Time	2.6 ns
Product Type	MOSFET
Rise Time	19 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	5.3 ns
Unit Weight	0.000198 oz

For more information, please refer to datasheet

Documents

CSD17571Q2 Datasheet

More Information

This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.