Description
CSD17573Q5B Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.174 |
100 — 249 | 0.969 |
250 — 999 | 0.696 |
1,000 + | 0.42 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-CLIP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 1 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 49 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 195 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD17573Q5B |
Transistor Type | 1 N-Channel |
Width | 5 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 181 S |
Fall Time | 7 ns |
Product Type | MOSFET |
Rise Time | 20 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 40 ns |
Typical Turn-On Delay Time | 6 ns |
Unit Weight | 0.003235 oz |
For more information, please refer to datasheet
Documents
CSD17573Q5B Datasheet |
More Information
This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.