CSD17575Q3


YeeHing #: Y012-CSD17575Q3
Inventory: 7800

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Description

CSD17575Q3 Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.763
100 — 249 0.587
250 — 999 0.432
1,000 + 0.22

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-CLIP-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 182 A
Rds On - Drain-Source Resistance 2.3 mOhms
Vgs th - Gate-Source Threshold Voltage 1.1 V
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 23 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 108 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 3.3 mm
Series CSD17575Q3
Transistor Type 1 N-Channel
Width 3.3 mm
Brand Texas Instruments
Forward Transconductance - Min 118 S
Fall Time 3 ns
Product Type MOSFET
Rise Time 10 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 4 ns
Unit Weight 0.001570 oz

For more information, please refer to datasheet

Documents

CSD17575Q3 Datasheet

More Information

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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