Description
CSD17575Q3 Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.763 |
100 — 249 | 0.587 |
250 — 999 | 0.432 |
1,000 + | 0.22 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-CLIP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 182 A |
Rds On - Drain-Source Resistance | 2.3 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 23 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 108 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 3.3 mm |
Series | CSD17575Q3 |
Transistor Type | 1 N-Channel |
Width | 3.3 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 118 S |
Fall Time | 3 ns |
Product Type | MOSFET |
Rise Time | 10 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 4 ns |
Unit Weight | 0.001570 oz |
For more information, please refer to datasheet
Documents
CSD17575Q3 Datasheet |
More Information
This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.