CSD17576Q5BT


YeeHing #: Y012-CSD17576Q5BT
Inventory: 4000

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Description

CSD17576Q5BT Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.121
100 — 249 0.863
250 — 999 0.635
1,000 + 0.32

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.4 mOhms
Vgs th - Gate-Source Threshold Voltage 1.1 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 68 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD17576Q5B
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 120 S
Fall Time 3 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 5 ns
Unit Weight 0.003743 oz

For more information, please refer to datasheet

Documents

CSD17576Q5BT Datasheet

More Information

This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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