Description
CSD17579Q3AT Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.855 |
| 100 — 249 | 0.657 |
| 250 — 999 | 0.484 |
| 1,000 + | 0.24 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSONP-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 11.8 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 5.3 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 29 W |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.9 mm |
| Length | 3.15 mm |
| Series | CSD17579Q3A |
| Transistor Type | 1 N-Channel |
| Width | 3 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 37 S |
| Fall Time | 1 ns |
| Product Type | MOSFET |
| Rise Time | 5 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 2 ns |
| Unit Weight | 0.000963 oz |
For more information, please refer to datasheet
Documents
| CSD17579Q3AT Datasheet |
More Information
This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
