Description
CSD17581Q3A Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.496 |
100 — 249 | 0.382 |
250 — 999 | 0.281 |
1,000 + | 0.14 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSONP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 25 A |
Rds On - Drain-Source Resistance | 3.9 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 54 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 63 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 0.9 mm |
Length | 3.15 mm |
Series | CSD17581Q3A |
Transistor Type | 1 N-Channel |
Width | 3 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 78 S |
Fall Time | 10 ns |
Product Type | MOSFET |
Rise Time | 23 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 23 ns |
Typical Turn-On Delay Time | 12 ns |
Unit Weight | 0.000977 oz |
For more information, please refer to datasheet
Documents
CSD17581Q3A Datasheet |
More Information
This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.