Description
CSD18501Q5A Texas Instruments - Yeehing Electronics
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.31 |
| 100 — 249 | 1.082 |
| 250 — 999 | 0.777 |
| 1,000 + | 0.41 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSONP-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 161 A |
| Rds On - Drain-Source Resistance | 3.2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 42 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 150 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 6 mm |
| Series | CSD18501Q5A |
| Transistor Type | 1 N-Channel |
| Width | 4.9 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 118 S |
| Development Kit | EVMX777BG-01-00-00, EVMX777G-01-20-00 |
| Fall Time | 3.4 ns |
| Product Type | MOSFET |
| Rise Time | 10 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 4.7 ns |
| Unit Weight | 0.003097 oz |
For more information, please refer to datasheet
Documents
| CSD18501Q5A Datasheet |
More Information
This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
