Description
CSD18503Q5A Texas Instruments - Yeehing Electronics
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.136 |
100 — 249 | 0.874 |
250 — 999 | 0.644 |
1,000 + | 0.32 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSONP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 121 A |
Rds On - Drain-Source Resistance | 4.3 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 27 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 120 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD18503Q5A |
Transistor Type | 1 N-Channel |
Width | 4.9 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 100 S |
Fall Time | 2.6 ns |
Product Type | MOSFET |
Rise Time | 8.8 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 4.5 ns |
For more information, please refer to datasheet
Documents
CSD18503Q5A Datasheet |
More Information
This 40 V, 3.4 mΩ, 5 × 6 mm SON NexFET power MOSFET is designed to minimize losses in power conversion applications.