CSD18509Q5BT


YeeHing #: Y012-CSD18509Q5BT
Inventory: 7600

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Description

CSD18509Q5BT Texas Instruments - Yeehing Electronics

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 2.029
100 — 249 1.676
250 — 999 1.204
1,000 + 0.53

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.3 mOhms
Vgs th - Gate-Source Threshold Voltage 1.8 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 150 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 195 W
Configuration Single
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD18509Q5B
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 180 S
Fall Time 11 ns
Product Type MOSFET
Rise Time 19 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 57 ns
Typical Turn-On Delay Time 9 ns
Unit Weight 0.000847 oz

For more information, please refer to datasheet

Documents

CSD18509Q5BT Datasheet

More Information

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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