Description
CSD18510KCS Texas Instruments - Yeehing Electronics
40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.613 |
100 — 249 | 1.332 |
250 — 999 | 0.957 |
1,000 + | 0.41 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 2 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 153 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 250 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Tube |
Series | CSD18510KCS |
Transistor Type | 1 N-Channel |
Brand | Texas Instruments |
Forward Transconductance - Min | 330 S |
Fall Time | 8 ns |
Product Type | MOSFET |
Rise Time | 8 ns |
Factory Pack Quantity | 50 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 29 ns |
Typical Turn-On Delay Time | 10 ns |
Unit Weight | 0.063493 oz |
For more information, please refer to datasheet
Documents
CSD18510KCS Datasheet |
More Information
This 40-V, 1.4-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.