CSD18510KTT


YeeHing #: Y012-CSD18510KTT
Inventory: 3400

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Description

CSD18510KTT Texas Instruments - Yeehing Electronics

40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.725
100 — 249 1.425
250 — 999 1.023
1,000 + 0.54

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 200 A
Rds On - Drain-Source Resistance 2 mOhms
Vgs th - Gate-Source Threshold Voltage 1.4 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 153 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 250 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 19.7 mm
Length 9.25 mm
Series CSD18510KTT
Transistor Type 1 N-Channel
Width 10.26 mm
Brand Texas Instruments
Forward Transconductance - Min 330 S
Fall Time 8 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 8 ns
Factory Pack Quantity 500
Subcategory MOSFETs
Typical Turn-Off Delay Time 29 ns
Typical Turn-On Delay Time 10 ns
Unit Weight 0.077603 oz

For more information, please refer to datasheet

Documents

CSD18510KTT Datasheet

More Information

This 40-V, 1.4-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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