CSD18511KTTT


YeeHing #: Y012-CSD18511KTTT
Inventory: 2600

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Description

CSD18511KTTT Texas Instruments - Yeehing Electronics

40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.579
100 — 249 1.304
250 — 999 0.937
1,000 + 0.49

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 194 A
Rds On - Drain-Source Resistance 3.2 mOhms
Vgs th - Gate-Source Threshold Voltage 1.5 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 64 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 188 W
Configuration Single
Channel Mode Enhancement
Packaging Reel
Series CSD18511KTT
Transistor Type 1 N-Channel
Brand Texas Instruments
Forward Transconductance - Min 249 S
Fall Time 3 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 6 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 8 ns

For more information, please refer to datasheet

Documents

CSD18511KTTT Datasheet

More Information

This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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