CSD18511Q5AT


YeeHing #: Y012-CSD18511Q5AT
Inventory: 4000

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Description

CSD18511Q5AT Texas Instruments - Yeehing Electronics

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.21
100 — 249 0.931
250 — 999 0.686
1,000 + 0.31

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSONP-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.7 mOhms
Vgs th - Gate-Source Threshold Voltage 1.5 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 82 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Series CSD18511Q5A
Transistor Type 1 N-Channel
Brand Texas Instruments
Forward Transconductance - Min 5.2 S
Fall Time 5 ns
Product Type MOSFET
Rise Time 15 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 24 ns
Typical Turn-On Delay Time 6 ns

For more information, please refer to datasheet

Documents

CSD18511Q5AT Datasheet

More Information

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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