CSD18512Q5BT


YeeHing #: Y012-CSD18512Q5BT
Inventory: 8800

Feel free to reach out to us for more information.
Click the button below to unveil exclusive discounts and delightful surprises.

Description

CSD18512Q5BT Texas Instruments - Yeehing Electronics

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.572
100 — 249 1.299
250 — 999 0.933
1,000 + 0.49

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.8 mOhms
Vgs th - Gate-Source Threshold Voltage 1.3 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 98 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 139 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Series CSD18512Q5B
Transistor Type 1 N-Channel
Brand Texas Instruments
Forward Transconductance - Min 136 S
Fall Time 7 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 31 ns
Typical Turn-On Delay Time 7 ns
Unit Weight 0.004081 oz

For more information, please refer to datasheet

Documents

CSD18512Q5BT Datasheet

More Information

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

You may also like

Recently viewed