Description
CSD18536KTT Texas Instruments - Yeehing Electronics
60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 3.535 |
100 — 249 | 3.098 |
250 — 999 | 2.172 |
1,000 + | 1.40 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 200 A |
Rds On - Drain-Source Resistance | 1.7 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 140 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 19.7 mm |
Length | 9.25 mm |
Series | CSD18536KTT |
Transistor Type | 1 N-Channel |
Width | 10.26 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 312 S |
Fall Time | 4 ns |
Moisture Sensitive | Yes |
Product Type | MOSFET |
Rise Time | 5 ns |
Factory Pack Quantity | 500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 24 ns |
Typical Turn-On Delay Time | 11 ns |
For more information, please refer to datasheet
Documents
CSD18536KTT Datasheet |
More Information
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.