Description
CSD18537NKCS Texas Instruments - Yeehing Electronics
60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.914 |
100 — 249 | 0.703 |
250 — 999 | 0.518 |
1,000 + | 0.26 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 56 A |
Rds On - Drain-Source Resistance | 14 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.6 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 14 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 94 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Tube |
Height | 16.51 mm |
Length | 10.67 mm |
Series | CSD18537NKCS |
Transistor Type | 1 N-Channel |
Width | 4.7 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 100 S |
Fall Time | 3.9 ns |
Product Type | MOSFET |
Rise Time | 3.2 ns |
Factory Pack Quantity | 50 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 12.6 ns |
Typical Turn-On Delay Time | 4.5 ns |
Unit Weight | 0.211644 oz |
For more information, please refer to datasheet
Documents
CSD18537NKCS Datasheet |
More Information
This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.